Highly thermally stable, high-performance InGaAsP: InGaAsP multi-quantum-well structures for optical devices by atmospheric pressure MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Low-threshold-current-density 1.5 mu m lasers using compressively strained InGaAsP quantum wells
2. J. Barrau, private communication.
3. Proc. 4th Intern. Conf. on InP and Related Materials;Starck,1992
4. Gain and threshold characteristics of strain-compensated multiple-quantum-well lasers
5. Macroscopic mechanism of group V interdiffusion in undoped InGaAs/InP quantum wells grown by MOVPE
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