Performance prediction of InP/GaAsSb double heterojunction bipolar transistors for THz applications-Reference-Cited by-同舟云学术

Performance prediction of InP/GaAsSb double heterojunction bipolar transistors for THz applications

Published:2021-07-21 Issue:3 Volume:130 Page:034502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wen Xin¹^ORCID,Arabhavi Akshay²^ORCID,Quan Wei²^ORCID,Ostinelli Olivier²^ORCID,Mukherjee Chhandak³^ORCID,Deng Marina³^ORCID,Frégonèse Sébastien³^ORCID,Zimmer Thomas³^ORCID,Maneux Cristell³^ORCID,Bolognesi Colombo R.²^ORCID,Luisier Mathieu¹^ORCID

Affiliation:

1. Integrated Systems Laboratory, Department of Electrical Engineering and Information Technology, ETH Zürich, Gloriastrasse 35, 8092 Zürich, Switzerland

2. Millimeter-Wave Electronics Laboratory, Department of Electrical Engineering and Information Technology, ETH Zürich, Gloriastrasse 35, 8092 Zürich, Switzerland

3. IMS Laboratory, University of Bordeaux, 351, Cours de la Libération, 33405 Talence, France

Funder

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Agence Nationale de la Recherche

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0054197

Reference36 articles.

1. Over 450-GHz f_t and f_max InP/InGaAs DHBTs With a Passivation Ledge Fabricated by Utilizing SiN/SiO₂ Sidewall Spacers