Thermal Model of a Heterojunction Bipolar Transistor Taking into Account the Voltage Drop on the Emitter Fingers of Metallization-Reference-Cited by-同舟云学术

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Thermal Model of a Heterojunction Bipolar Transistor Taking into Account the Voltage Drop on the Emitter Fingers of Metallization

Published:2022-06-09 Issue: Volume: Page:
ISSN:
Container-title:2022 Moscow Workshop on Electronic and Networking Technologies (MWENT)
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Author:

Sergeev Viacheslav A.¹,Hodakov Alexander M.²

Affiliation:

1. Ulyanovsk State Technical University Ulyanovsk branch of Kotel’nikov Institute of Radio-Engineering and Electronics of Russian Academy of Sciences,Ulyanovsk,Russia

2. Ulyanovsk branch of Kotel’nikov Institute of Radio-Engineering and Electronics of Russian Academy of Sciences,Ulyanovsk,Russia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9802078/9801892/09802430.pdf?arnumber=9802430

Reference10 articles.

1. The Safe Operating Area of GaAs-Based Heterojunction Bipolar Transistors

2. Industrialization of mmWave SiGe technologies: Status, future requirements and challenges

3. Nonlinear thermal models of semiconductor devices, Ulyanovsk: UlSTU;sergeev,2012

4. Thermal resistance matrix representation of thermal effects and thermal design of microwave power HBTs with two-dimensional array layout*

5. Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing;liang;Chinese Physics B,2011

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