InP DHBT Analytical Modeling: Toward THz Transistors-Reference-Cited by-同舟云学术

InP DHBT Analytical Modeling: Toward THz Transistors

Published:2023-11 Issue:11 Volume:42 Page:4102-4111
ISSN:0278-0070
Container-title:IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
language:
Short-container-title:IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

Author:

Davy Nil¹^ORCID,Nodjiadjim Virginie¹^ORCID,Riet Muriel¹,Mismer Colin¹,Deng Marina²^ORCID,Mukherjee Chhandak²^ORCID,Ardouin Bertrand¹,Maneux Cristell²^ORCID

Affiliation:

1. III-V Lab, Palaiseau, France

2. Univ. Bordeaux, CNRS, Bordeaux INP, IMS, UMR 5218, Talence, France

Funder

ANR-FNS through ULTIMATE project

European Commission through the Photonics Public Private Partnership Initiatives

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Software

Link

http://xplorestaging.ieee.org/ielx7/43/10288105/10071545.pdf?arnumber=10071545

Reference25 articles.

1. InP HBT self-aligned technology for 40 Gbit/s ICs: fabrication and CAD geometric model

2. Scalable Compact Modeling of III–V DHBTs: Prospective Figures of Merit Toward Terahertz Operation

3. An Integral Charge Control Model of Bipolar Transistors

4. 0.4- ?m InP/InGaAs DHBT with a 380-GHz fT,600-GHz fMAX and BVCE04.5 V;davy;Proc IEEE BiCMOS Compd Semicond Integr Circuits Technol Symp (BCICTS),2021

5. A computationally efficient physics-based compact bipolar transistor model for circuit Design-part I: model formulation

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