InP DHBT On-Wafer RF Characterization and Small-Signal Modelling up to 220 GHz
Author:
Affiliation:
1. joint lab between Nokia, Thales and CEA Leti,III-V Lab,France
2. University of Bordeaux, CNRS UMR 5218, Bordeaux INP,IMS Laboratory,France
Funder
European Commission
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10288583/10288635/10288849.pdf?arnumber=10288849
Reference12 articles.
1. InP DHBT test structure optimization towards 110 GHz characterization
2. 0.4-?m InP/InGaAs DHBT with a 380-GHz fT, >600 GHz fMAX and BVCE0>4.5V;davy;2021 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS),2021
3. Capacitively Loaded Inverted CPWs for Distributed TRL-Based De-Embedding at (Sub) mm-Waves
4. Silicon Test Structures Design for Sub-THz and THz Measurements
5. A Prescription for Sub-Millimeter-Wave Transistor Characterization
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