InP DHBT test structure optimization towards 110 GHz characterization-Reference-Cited by-同舟云学术

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InP DHBT test structure optimization towards 110 GHz characterization

Published:2022-09-19 Issue: Volume: Page:
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Container-title:ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)
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Author:

Davy Nil¹,Deng Marina²,Nodjiadjim Virginie¹,Mukherjee Chhandak²,Riet Muriel¹,Mismer Colin¹,Renaudier Jeremic³,Maneux Cristell²

Affiliation:

1. Thales and CEA Leti,III-V Lab, joint lab between Nokia Bell Labs,Palaiseau,France

2. University of Bordeaux, CNRS UMR5218, Bordeaux INP,IMS Laboratory,Talence,France

3. Nokia Bell Labs,Nozay,France

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9947060/9947094/09947170.pdf?arnumber=9947170

Reference14 articles.

1. 160-GSa/s-and-Beyond 108-GHz-Bandwidth Over-2-V_ppd Output-Swing 0.5-μm InP DHBT 2:1 AMUX-Driver for Next-Generation Optical Communications

2. 0.4-μm InP/InGaAs DHBT with a 380-GHz ${f_{T}}$, > 600-GHz $f_{\max}$ and BV_CE0 > 4.5 V

3. Silicon Test Structures Design for Sub-THz and THz Measurements

4. Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz

5. Importance of Probe Choice for Extracting Figures of Merit of Advanced mmW Transistors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InP DHBT On-Wafer RF Characterization and Small-Signal Modelling up to 220 GHz;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

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