Activated boron and its concentration profiles in heavily doped Si studied by soft x-ray photoelectron spectroscopy and Hall measurements-Reference-Cited by-同舟云学术

Activated boron and its concentration profiles in heavily doped Si studied by soft x-ray photoelectron spectroscopy and Hall measurements

Published:2008-11 Issue:9 Volume:104 Page:093709
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tsutsui Kazuo,Matsuda Toru,Watanabe Masamitsu,Jin Cheng-Guo,Sasaki Yuichiro,Mizuno Bunji,Ikenaga Eiji,Kakushima Kuniyuki,Ahmet Parhat,Maruizumi Takuya,Nohira Hiroshi,Hattori Takeo,Iwai Hiroshi

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3014033

Reference9 articles.

1. New doping method for subhalf micron trench sidewalls by using an electron cyclotron resonance plasma

2. New method of Plasma doping with in-situ Helium pre-amorphization

3. Core-electron binding energies for compounds of boron, carbon, and chromium

4. Molecular spectroscopy by means of ESCA

5. Calculations of electorn inelastic mean free paths. II. Data for 27 elements over the 50-2000 eV range

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