Evaluation of the Chemical States and Electrical Activation of Ultra-Highly B-Doped Si1-Xgex by Ion Implantation and Subsequent Nanosecond Laser Annealing

Author:

Lee Kiseok,Jo Chunghee,Yoon Dongmin,Baik Seunghyun,Ko Dae-Hong

Publisher

Elsevier BV

Reference54 articles.

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5. Dopant Activation of In Situ Phosphorus-Doped Silicon Using Multi-Pulse Nanosecond Laser Annealing;H Shin;Phys. Status Solidi Appl. Mater. Sci,2020

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