Monte Carlo analysis of electron relaxation process and transport property of wurtzite InN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3676199
Reference36 articles.
1. Low-field electron mobility in wurtzite InN
2. Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
3. Comparison of high field electron transport in GaN and GaAs
4. Highly efficient THz emission from differently grown InN at 800nm and 1060nm excitation
5. InN: A material with photovoltaic promise and challenges
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1. InN: Breaking the limits of solid-state electronics;AIP Advances;2021-12-01
2. Comparison the electron momentum and energy relaxation process in wurtzite GaN, InN and AlN by Monte Carlo method;Solid State Communications;2019-02
3. Electron Momentum and Energy Relaxation Times in Wurtzite GaN, InN and AlN: A Monte Carlo Study;Journal of Electronic Materials;2017-11-30
4. Current conduction mechanism and electrical break-down in InN grown on GaN;Applied Physics Letters;2017-06-05
5. Velocity overshoot decay mechanisms in compound semiconductor field-effect transistors with a submicron characteristic length;AIP Advances;2015-06
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