Current conduction mechanism and electrical break-down in InN grown on GaN-Reference-Cited by-同舟云学术

Current conduction mechanism and electrical break-down in InN grown on GaN

Published:2017-06-05 Issue:23 Volume:110 Page:232103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kuzmik J.¹,Fleury C.²,Adikimenakis A.³,Gregušová D.¹^ORCID,Ťapajna M.¹^ORCID,Dobročka E.¹,Haščík Š.¹,Kučera M.¹,Kúdela R.¹,Androulidaki M.³,Pogany D.²,Georgakilas A.³⁴

Affiliation:

1. Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravska cesta 9, 841 04 Bratislava, Slovakia

2. Institute for Solid State Electronics, TU Wien, Floragasse 7, A-1040 Vienna, Austria

3. Microelectronics Research Group (MRG), IESL, FORTH, P.O. Box 1385, 71110 Heraklion, Greece

4. Department of Physics, University of Crete, 71203 Heraklion, Greece

Funder

CENTE II

NFFA-Europe

Agentúra na Podporu Výskumu a Vývoja (APVV)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4985128

Reference34 articles.

1. Transient electron transport in wurtzite GaN, InN, and AlN

2. Observation of large electron drift velocities in InN by ultrafast Raman spectroscopy

3. Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis

4. Low-field electron mobility in wurtzite InN

5. Monte Carlo analysis of electron relaxation process and transport property of wurtzite InN

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