Comparison the electron momentum and energy relaxation process in wurtzite GaN, InN and AlN by Monte Carlo method-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Comparison the electron momentum and energy relaxation process in wurtzite GaN, InN and AlN by Monte Carlo method

Published:2019-02 Issue: Volume:288 Page:68-73
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Wang Shulong,Wu Zhenjie,Haifeng Zhang,Duan Xiaoling,Han Chao,Wei Yin,Liu Hongxia

Funder

National Natural Science Foundation of China

Doctoral Program of High Education

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference32 articles.

1. Suppression of plasma-induced damage on GaN etched by a Cl2 plasma at high temperatures;Liu;Jpn. J. Appl. Phys.,2015

2. Ultrafast, superhigh gain visible-blind UV detector and optical logic gates based on nonpolar a-axial GaN nanowire;Wang;Nanoscale,2014

3. Terahertz detectors arrays based on orderly aligned InN nanowires;Chen;Sci. Rep.,2015

4. Normally off AlGaN/GaN HEMT on Si substrate with selectively dry-etched recessed gate and polarization-charge-compensation δ-doped GaN cap layer;Wakejima;Appl. Phys. Exp.,2015

5. Progress in silicon carbide semiconductor electronics technology;Neudeck;J. Electron. Mater.,1995

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anti-Wilson mechanism for adjusting bandgap and electronic transport property of a half-Heusler material LiCdP;Physica Scripta;2024-09-03

2. Anti-Wilson Mechanism for Adjusting Bandgap and Electronic Transport Property of a Half-Heusler Material Licdp;2024

3. Effects of electric field and device size on the electron velocity in p-i-n GaAs semiconductor;Physics Letters A;2023-12

4. Using ensemble Monte Carlo methods to evaluate non-equilibrium Green’s functions, II. Polar-optical phonons;Semiconductor Science and Technology;2023-05-18

5. Temperature and size effects on the oscillatory frequency of electron velocity in p-i-n GaAs semiconductor;Physics Letters A;2022-09

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3