Band offset measurements of the GaN (0001)/HfO2 interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1625579
Reference15 articles.
1. Cleaning of AlN and GaN surfaces
2. Soft x-ray photoemission studies of the HfO2/SiO2/Si system
3. Band lineup of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Charge transfer correction term for the electron affinity rule
4. Theory of semiconductor heterojunctions: The role of quantum dipoles
5. Band offsets of wide-band-gap oxides and implications for future electronic devices
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