Soft x-ray photoemission studies of the HfO2/SiO2/Si system
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1450049
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1. High-κ gate dielectrics: Current status and materials properties considerations
2. Alternative dielectrics to silicon dioxide for memory and logic devices
3. In situ study of atomic layer epitaxy growth of tantalum oxide thin films from Ta(OC2H5)5 and H2O
4. High Dielectric Constant of RF-Sputtered HfO2Thin Films
5. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
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