Investigations on band commutativity at all oxide p-type NiO/n-type β-Ga2O3 heterojunction using photoelectron spectroscopy-Reference-Cited by-同舟云学术

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Investigations on band commutativity at all oxide p-type NiO/n-type β-Ga2O3 heterojunction using photoelectron spectroscopy

Published:2019-12-16 Issue:25 Volume:115 Page:251603
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ghosh Sahadeb¹²,Baral Madhusmita¹²,Kamparath Rajiv³,Singh S. D.¹²^ORCID,Ganguli Tapas¹²

Affiliation:

1. Synchrotrons Utilization Section, Raja Ramanna Centre for Advanced Technology, Indore 452013, India

2. Homi Bhabha National Institute, Anushakti Nagar, Mumbai 400094, India

3. Laser Technology Division, Raja Ramanna Centre for Advanced Technology, Indore 452013, India

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5126150

Reference44 articles.

1. Polymorphism of Ga2O3 and the System Ga2O3—H2O

2. A review of Ga2O3materials, processing, and devices

3. Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors

4. Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

5. Band alignments of β-Ga2O3 with MgO, Al2O3 and MgAl2O4 measured by x-ray photoelectron spectroscopy

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3. High-quality crystalline NiO/β-Ga2O3 p–n heterojunctions grown by the low-cost and vacuum-free mist-CVD for device applications;Science China Materials;2024-04-25

4. Non-damaging growth and band alignment of p-type NiO/β-Ga₂O₃ heterojunction diodes for high power applications;Journal of Materials Chemistry C;2024

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