Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors
Author:
Affiliation:
1. Department of Chemical and Biological Engineering, Korea University, Seoul 02841, South Korea
2. Department of Chemical Engineering, Dankook University, Yongin 16890, South Korea
Funder
National Research Foundation of Korea
Korea Institute of Energy Technology Evaluation and Planning
Defense Threat Reduction Agency
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.7b13881
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