Device‐quality copper using chemical vapor deposition of β‐diketonate source precursors in liquid solution
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108286
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4. Metalorganic chemical vapor deposition using a single solution source for highJcY1Ba2Cu3O7−xsuperconducting films
5. Enhanced growth of device‐quality copper by hydrogen plasma‐assisted chemical vapor deposition
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