Enhanced growth of device‐quality copper by hydrogen plasma‐assisted chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106773
Reference4 articles.
1. Thin copper films by plasma CVD using copper-hexafluoro-acetylacetonate
2. Vapor Deposition of Metals by Hydrogen Reduction of Metal Chelates
3. Low-temperature metal-organic chemical vapor deposition (LTMOCVD) of device-quality copper films for microelectronic applications
4. On the adsorption and desorption of H2 at metal surfaces
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1. Thin-Film Deposition Materials;Handbook of Chemicals and Gases for the Semiconductor Industry;2002-07-15
2. A NEW FEATURE SCALE MODEL AND EXPERIMENTS OF THE HYDROGEN PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION OF COPPER;Chemical Engineering Communications;2000-11
3. Development and qualification of a vacuum pumping system for metalorganic vapor phase epitaxy copper precursors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
4. Conformal Deposition of High-Purity Copper Using Plasma Reactor with H Atom Source;Japanese Journal of Applied Physics;1999-07-30
5. Plasma-enhanced metal organic chemical vapor deposition of high purity copper thin films using plasma reactor with the H atom source;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-05
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