A NEW FEATURE SCALE MODEL AND EXPERIMENTS OF THE HYDROGEN PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION OF COPPER
Author:
Affiliation:
1. a Department of Chemical Engineering , Center for Integrated Electronics and Electronic Manufacturing, Rensselaer Polytechnic Institute , Troy, NY, 12180
Publisher
Informa UK Limited
Subject
General Chemical Engineering,General Chemistry
Link
https://www.tandfonline.com/doi/pdf/10.1080/00986440008912830
Reference31 articles.
1. Copper metallization for ULSL and beyond
2. Chemical Vapor Deposition of Copper for Multilevel Metallization
3. Chemical Vapor Deposition of Copper from Hexafluoroacetylacetonato Copper(I) Vinyltrimethylsilane: Deposition Rates, Mechanism, Selectivity, Morphology, and Resistivity as a Function of Temperature and Pressure
4. Awaya , N. and Arita , Y , ( 1991 ) .Proc. 1991 Symp. on VLSI Technol., Orso , Japan , pg. 37 .
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