Enhanced stress relaxation in ultrathin SiGe-on-insulator by H+-implantation-assisted oxidation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1935028
Reference13 articles.
1. Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors
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3. Role of Si1−xGex buffer layer on mobility enhancement in a strained-Si n-channel metal–oxide–semiconductor field-effect transistor
4. Strain relaxation of epitaxial SiGe layers on Si(100) improved by hydrogen implantation
5. Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction
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1. Enhancement of Local Strain in Si Microstructure by Oxidation Induced Ge Condensation;ECS Transactions;2019-12-18
2. Ion effects in hydrogen-induced blistering of Mo/Si multilayers;Journal of Applied Physics;2013-09-21
3. Relaxation Mechanism of SiGe-on-Insulator by Oxidation-Induced Ge Condensation with H[sup +] Irradiation and Postannealing;Journal of The Electrochemical Society;2010
4. Stress-enhancement in free-standing Si pillars through nonequilibrium dehydrogenation in SiN:H stress-liners by ultraviolet light irradiation;Applied Physics Letters;2009-12-28
5. Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge condensation by dry oxidation;Solid-State Electronics;2009-08
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