Role of Si1−xGex buffer layer on mobility enhancement in a strained-Si n-channel metal–oxide–semiconductor field-effect transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125197
Reference12 articles.
1. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
2. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
3. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy
4. Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures
5. Hybrid MBE growth and mobility limiting factors of n-channel modulation-doped systems
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