Effects of lateral current injection in GaN multi-quantum well light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4720584
Reference28 articles.
1. Efficiency droop in nitride-based light-emitting diodes
2. Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes
3. Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells
4. Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes
5. Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer
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