Lateral carrier injection for the uniform pumping of several quantum wells in InGaN/GaN light-emitting diodes
Author:
Funder
Narodowe Centrum Badań i Rozwoju
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference23 articles.
1. Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes
2. The critical thickness of InGaN on (0001)GaN
3. Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells
4. Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions
5. Optically pumped GaInN/GaN multiple quantum wells for the realization of efficient green light-emitting devices
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence;Journal of Applied Physics;2024-08-26
2. Dynamics of carrier injection through V-defects in long wavelength GaN LEDs;Applied Physics Letters;2024-04-29
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