Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4864311
Reference15 articles.
1. Efficiency droop in nitride-based light-emitting diodes
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5. GaN-Based Light Emitting Diodes with Tunnel Junctions
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