A model for linewidth‐dependent electromigration lifetime and its application to design rule scaling for narrow interconnects
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348659
Reference10 articles.
1. Dependence of Electromigration‐Induced Failure Time on Length and Width of Aluminum Thin‐Film Conductors
2. Monte Carlo calculations of structure‐induced electromigration failure
3. A model for the width dependence of electromigration lifetimes in aluminum thin‐film stripes
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electromigration mechanisms in Cu nano-wires;2010 IEEE International Reliability Physics Symposium;2010
2. An analysis of the weakest-link model for early electromigration failure;Journal of Physics D: Applied Physics;2004-07-01
3. Electromigration model for the prediction of lifetime based on the failure unit statistics in aluminum metallization;Journal of Applied Physics;2003-01-15
4. A Complete Model of Lifetime Distribution for Electromigration Failure Including Grain Boundary and Lattice Diffusions in Submicron Thin Film Metallization;Japanese Journal of Applied Physics;1995-09-15
5. The Influence of Grain Structure on the Reliability of Narrow Al-Based Interconnects;MRS Proceedings;1995
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