The Influence of Grain Structure on the Reliability of Narrow Al-Based Interconnects

Abstract

AbstractThe work reported here concerns the effect of grain structure on electromigration failure in pure Al and Al-2wt.%Cu-lwt.%Si lines. The grain structures of fine lines were controlled by annealing after patterning to promote the formation of "bamboo" structures. Significant improvements in the median time to failure (MTF) and the deviation of the time to failure (DTF) were observed with the development of near-bamboo structures with polygranular-segment lengths shorter than ~ 5 μm. The most common failure sites are voids or slits across bamboo grains at the upstream ends of polygranular segments. The time-to-failure decreases with the polygranular segment length, and can be significantly enhanced by controlling the grain structure.