Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter-Reference-Cited by-同舟云学术

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Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter

Published:2016-05-09 Issue:19 Volume:108 Page:192101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yang Zhichao¹^ORCID,Zhang Yuewei¹^ORCID,Krishnamoorthy Sriram¹^ORCID,Nath Digbijoy N.¹,Khurgin Jacob B.²,Rajan Siddharth¹³

Affiliation:

1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

2. Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218, USA

3. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA

Funder

Office of Naval Research (ONR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4949489

Reference19 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

3. Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz

4. Isotope disorder of phonons in GaN and its beneficial effect on high power field effect transistors

5. Effect of Optical Phonon Scattering on the Performance of GaN Transistors

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1. Hot Carrier Nanowire Transistors at the Ballistic Limit;Nano Letters;2024-06-24

2. Limiting role of dislocations in high-current AlGaN/GaN hot electron transistors;Applied Physics Letters;2024-02-05

3. GaN/Gr (2D)/Si (3D) Combined High-Performance Hot Electron Transistors;ACS Nano;2023-05-01

4. Dual-mode frequency multiplier in graphene-base hot electron transistor;Nanoscale;2023

5. III-nitride vertical hot electron transistor with polarization doping and collimated injection;Applied Physics Letters;2022-11-28

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