An instrument for in situ coherent x-ray studies of metal-organic vapor phase epitaxy of III-nitrides-Reference-Cited by-同舟云学术

An instrument for in situ coherent x-ray studies of metal-organic vapor phase epitaxy of III-nitrides

Published:2017-03 Issue:3 Volume:88 Page:035113
ISSN:0034-6748
Container-title:Review of Scientific Instruments
language:en
Short-container-title:Review of Scientific Instruments

Author:

Ju Guangxu¹,Highland Matthew J.¹,Yanguas-Gil Angel²^ORCID,Thompson Carol³,Eastman Jeffrey A.¹,Zhou Hua⁴,Brennan Sean M.⁵^ORCID,Stephenson G. Brian¹,Fuoss Paul H.¹

Affiliation:

1. >Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA

2. Energy Systems Division, Argonne National Laboratory, Argonne, Illinois 60439, USA

3. Department of Physics, Northern Illinois University, DeKalb, Illinois 60115, USA

4. X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA

5. Fairview Associates, Jackson, Wyoming 83002, USA

Funder

U.S. Department of Energy (DOE)

Advanced Photon Sciences (APS)

Publisher

AIP Publishing

Subject

Instrumentation

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4978656

Reference35 articles.

1. Real-Time X-Ray Scattering Studies of Surface Structure During Metalorganic Chemical Vapor Deposition of GaN

2. Indium adsorption on GaN under metal-organic chemical vapor deposition conditions

3. Real-time x-ray studies of crystal growth modes during metal-organic vapor phase epitaxy of GaN on c- and m-plane single crystals

4. X-ray characterization of GaN and related materials at growth temperatures–system design and measurements

5. Analysis of strain relaxation process in GaInN/GaN heterostructure by in situ X-ray diffraction monitoring during metalorganic vapor-phase epitaxial growth

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