Analysis of strain relaxation process in GaInN/GaN heterostructure by in situ X-ray diffraction monitoring during metalorganic vapor-phase epitaxial growth-Reference-Cited by-同舟云学术

Analysis of strain relaxation process in GaInN/GaN heterostructure by in situ X-ray diffraction monitoring during metalorganic vapor-phase epitaxial growth

Published:2013-01-30 Issue:3 Volume:7 Page:211-214
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Iida Daisuke,Kondo Yasunari,Sowa Mihoko,Sugiyama Toru,Iwaya Motoaki,Takeuchi Tetsuya,Kamiyama Satoshi,Akasaki Isamu

Funder

Ministry of Education, Culture, Sports, Science and Technology of Japan through the Supported Program for the Strategic Research Foundation at Private Universities

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201307023/fullpdf

Reference25 articles.

1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

2. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

3. A. Devos Endoreversible Thermodynamics of Solar Energy Conversion (Oxford University Press, New York, 1992).

4. Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate

5. Correlation between Device Performance and Defects in GaInN-Based Solar Cells

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