Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate-Reference-Cited by-同舟云学术

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Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate

Published:2010-10-22 Issue:11 Volume:3 Page:111001
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Kuwahara Yosuke,Fujii Takahiro,Fujiyama Yasuharu,Sugiyama Tohru,Iwaya Motoaki,Takeuchi Tetsuya,Kamiyama Satoshi,Akasaki Isamu,Amano Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/3/i=11/a=111001/pdf

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3. Indium content, doping and thickness related impacts on nonpolar (In,Ga)N solar cell performance: Numerical investigation;Solid State Communications;2023-11

4. Photovoltaics and Energy Conversion Devices;Group III‐Nitride Semiconductor Optoelectronics;2023-10-18

5. AlGaN as an electron transport layer for wide-bandgap perovskite solar cells;Japanese Journal of Applied Physics;2023-04-12

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