High resolution carrier temperature and lifetime topography of semi‐insulating GaAs using spatially and spectrally resolved photoluminescence
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353241
Reference17 articles.
1. Computer-Controlled Mapping of Photoluminescence Intensities
2. Optical Mapping of the Total EL2-Concentration in Semi-Insulating GaAs-Wafers
3. Free‐carrier lifetime and deep‐level luminescence in semi‐insulating GaAs: The influence of indium doping and growth in a magnetic field
4. Spatially resolved luminescence near dislocations in In‐alloyed Czochralski‐grown GaAs
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