Free‐carrier lifetime and deep‐level luminescence in semi‐insulating GaAs: The influence of indium doping and growth in a magnetic field
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344351
Reference17 articles.
1. Direct observation of dislocation effects on threshold voltage of a GaAs field‐effect transistor
2. Characterization of Nonuniformity in Semi-Insulating LEC GaAs by Photoluminescence Spectroscopy
3. Nonuniform photoluminescence intensity distribution on semi‐insulating GaAs and effects of Cr and dislocations
4. Study of Two Different Deep Levels in Undoped LEC SI-GaAs by Photoluminescence Spectroscopy
5. Effects of Whole Ingot Annealing on 1.49 eV PL Properties in LEC-Grown Semi-Insulating GaAs
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