Spatially resolved luminescence near dislocations in In‐alloyed Czochralski‐grown GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96013
Reference14 articles.
1. Photoluminescence at Dislocations in GaAs
2. Spatially resolved electrical and spectroscopic studies around dislocations in GaAs single crystals
3. Spatially Resolved Cathodoluminescence Study of Semi‐Insulating GaAs Substrates
4. Uniformity characterization of semi‐insulating GaAs by cathodoluminescence imaging
5. Improvement of crystal homogeneities in liquid‐encapsulated Czochralski grown, semi‐insulating GaAs by heat treatment
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1. Optically-Pumped Lasing of Doped ZnSe Epitaxial Layers Grown by Metal-Organic Vapour-Phase Epitaxy;physica status solidi (a);1997-02
2. Structural Characterization of InAlAs/InGaAs Layers Grown on InP Patterned Substrates;MRS Proceedings;1994
3. High resolution carrier temperature and lifetime topography of semi‐insulating GaAs using spatially and spectrally resolved photoluminescence;Journal of Applied Physics;1993-02
4. Scanned photoluminescence of semiconductors;Semiconductor Science and Technology;1992-01-01
5. Role of Growth Dislocations in Forming Inhomogeneous Properties in Gallium Arsenide Single Crystals;Growth of Crystals;1992
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