GaAs peculiarities related with inhomogeneities and the methods for reveal of their properties-Reference-Cited by-同舟云学术

GaAs peculiarities related with inhomogeneities and the methods for reveal of their properties

Published:2001-06 Issue:1 Volume:466 Page:39-46
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Vaitkus J,Baubinas R,Gaubas E,Jaras̆iūnas K,Jašinskaite R,Kažukauskas V,Kuprusevičius E,Matukas J,Palenskis V,Storasta J,Sūdz̆ius M,Tomašiūnas R

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference24 articles.

1. High resolution carrier temperature and lifetime topography of semi‐insulating GaAs using spatially and spectrally resolved photoluminescence

2. New model of conduction mechanism in semi‐insulating GaAs

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4. Influence of defect inhomogeneities on the Hall mobility and concentration in undoped GaAs

5. Interaction of deep levels and potential fluctuations in scattering and recombination phenomena in semi‐insulating GaAs

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