Influence of defect inhomogeneities on the Hall mobility and concentration in undoped GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368265
Reference33 articles.
1. Electrical inhomogeneity in 1" diameter partially dislocation-free undoped LEC GaAs
2. Hall Mobility Reduction due to Electron Scattering by Potential Fluctuation in Si-GaAs
3. Detection of deep levels and compensation mechanism in undoped, liquid‐encapsulated Czochralskin‐type GaAs
4. Signature of the gallium‐oxygen‐gallium defect in GaAs by deep level transient spectroscopy measurements
5. Recombination and Optical Excitation Properties of the Ga-O-Ga Center in Gallium Arsenide
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