Recombination and Optical Excitation Properties of the Ga-O-Ga Center in Gallium Arsenide-Reference-Cited by-同舟云学术

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Recombination and Optical Excitation Properties of the Ga-O-Ga Center in Gallium Arsenide

Published:1993-10 Issue: Volume:143-147 Page:283-288
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Alt H.C.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.143-147.283.pdf

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Chemical bonding and structure of metastable impurity centers in semiconductor crystals;Journal of Structural Chemistry;2000-07

4. Influence of defect inhomogeneities on the Hall mobility and concentration in undoped GaAs;Journal of Applied Physics;1998-08-15

5. Spectroscopic Identification of theSiO2Complex in Oxygen-Implanted GaAs:Si;Physical Review Letters;1997-08-11

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