Mass‐dispersive recoil spectrometry studies of oxygen and nitrogen redistribution in ion‐beam‐synthesized buried oxynitride layers in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99733
Reference7 articles.
1. Silicon on Insulator Formed By O+ OR N+ Ion Implantation
2. Measurement and modeling of circuit speed of CMOS on oxygen-implanted SOI
3. Silicon‐on‐insulator material formed by oxygen implantation and high‐temperature annealing: Carrier transport, oxygen activity, and interface properties
4. Formation mechanism and structures of buried oxy-nitride layers produced by ion beam synthesis
5. Quantitative mass and energy dispersive elastic recoil spectrometry: Resolution and efficiency considerations
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3. A TOF spectrometer for elastic recoil detection;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-05
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5. Recoil spectrometry: Ion accelerator based elemental characterisation of surface layers;Mikrochimica Acta;1995-03
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