Formation mechanism and structures of buried oxy-nitride layers produced by ion beam synthesis
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference17 articles.
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5. Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into silicon
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1. Study of structure and surface modification of silicon-on-insulator (SOI) devices synthesized by dual ion implantation;Surface and Coatings Technology;2009-06
2. HI-ERDA, Micro-Raman and HRXRD studies of buried silicon oxynitride layers synthesized by dual ion implantation;Vacuum;2009-05
3. Synthesis of buried silicon oxynitride layers by ion implantation for silicon-on-insulator (SOI) structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-04
4. Nitrogen depth distribution, interface and structure analysis of SiNx layers produced by low-energy ion implantation;Mikrochimica Acta;1997-03
5. A phenomenological theory of ion‐beam synthesis of ternary compound in silicon;Journal of Applied Physics;1996-11
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