Atomistic modeling of amorphization and recrystallization in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1564296
Reference15 articles.
1. Amorphization of silicon by elevated temperature ion irradiation
2. Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2or Si++B+
3. The equivalence of vacancy-type damage in ion-implanted Si seen by positron annihilation spectroscopy
4. B diffusion and clustering in ion implanted Si: The role of B cluster precursors
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