Determination of the lattice contraction of boron‐doped silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353886
Reference24 articles.
1. Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
2. Densitometric and Electrical Investigation of Boron in Silicon
3. X-ray measurement of elastic strain and lattice constant of diffused silicon
4. Stresses in silicon after boron diffusion (III) determination of lattice contraction coefficient in consideration of residual stresses
5. The lattice contraction coefficient of boron and phosphorus in silicon
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