Nanobeam electron diffraction strain mapping in monocrystalline silicon of modern trench power MOSFETs-Reference-Cited by-同舟云学术

Nanobeam electron diffraction strain mapping in monocrystalline silicon of modern trench power MOSFETs

Published:2022-08 Issue: Volume:264 Page:111870
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Karner Stefan,Blank Oliver,Rösch Maximilian,Zalesak Jakub,Keckes Jozef,Gammer Christoph

Funder

Ministerstvo Školství, Mládeže a Tělovýchovy

Austrian Science Fund

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference33 articles.

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4. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors;Lee;J. Appl. Phys.,2005

5. Stress-related problems in silicon technology;Hu;J. Appl. Phys.,1991

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