Photon assisted reduction of interface charge between CdTe substrates and metalorganic chemical vapor deposition CdTe epilayers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353316
Reference7 articles.
1. Determination of the interface charge between an epilayer and a substrate using capacitance‐voltage measurements
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3. Mercury cadmium telluride junctions grown by liquid phase epitaxy
4. A model for high temperature growth of CdTe by metal organic chemical vapor deposition
5. A model for the growth of cdte by metal organic chemical vapor deposition
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Predeposition ultraviolet treatment for adhesion improvement of thin films on mercury cadmium telluride;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-01
2. Surfaces/interfaces of narrow-gap II-VI compounds;Narrow-gap II–VI Compounds for Optoelectronic and Electromagnetic Applications;1997
3. Determination of interface properties between a depleted heteroepitaxial layer and a substrate from capacitance measurements;Journal of Applied Physics;1995-01
4. Band diagram of a HgTe‐CdTe semimetal‐semiconductor abrupt heterostructure;Journal of Applied Physics;1993-05
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