Determination of interface properties between a depleted heteroepitaxial layer and a substrate from capacitance measurements
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359384
Reference6 articles.
1. Measurement of isotype heterojunction barriers byC‐Vprofiling
2. On the Measurement of Impurity Atom Distributions in Silicon by the Differential Capacitance Technique
3. Determination of the interface charge between an epilayer and a substrate using capacitance‐voltage measurements
4. Photon assisted reduction of interface charge between CdTe substrates and metalorganic chemical vapor deposition CdTe epilayers
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