Tuning the Built-in Electric Field in Ferroelectric Pb(Zr0.2Ti0.8)O3 Films for Long-Term Stability of Single-Digit Nanometer Inverted Domains-Reference-Cited by-同舟云学术

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Tuning the Built-in Electric Field in Ferroelectric Pb(Zr0.2Ti0.8)O3 Films for Long-Term Stability of Single-Digit Nanometer Inverted Domains

Published:2012-10-12 Issue:11 Volume:12 Page:5455-5463
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Tayebi Noureddine¹²,Kim Sunkook¹³,Chen Robert J.¹,Tran Quan¹,Franklin Nathan¹,Nishi Yoshio²,Ma Qing¹,Rao Valluri¹

Affiliation:

1. Intel Corporation, 2200 Mission College Boulevard, Santa Clara, California 95054, United States

2. Department of Electrical Engineering, Stanford University, 420 Via Palou Mall, Stanford, California 94305, United States

3. Department of Electronics and Radio Engineering, Institute for Laser Engineering, Kyung Hee University, Gyeonggi, 446-701, South Korea

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl302911k

Reference52 articles.

1. Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories

2. Ferroelectric Random Access Memories

3. Local, Nonvolatile Electronic Writing of Epitaxial Pb(Zr 0.52 Ti 0.48 )O 3 /SrRuO 3 Heterostructures

4. Ferroelectricity at the Nanoscale: Local Polarization in Oxide Thin Films and Heterostructures

5. Nanodomain manipulation for ultrahigh density ferroelectric data storage

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