Local, Nonvolatile Electronic Writing of Epitaxial Pb(Zr 0.52 Ti 0.48 )O 3 /SrRuO 3 Heterostructures-Reference-Cited by-同舟云学术

Local, Nonvolatile Electronic Writing of Epitaxial Pb(Zr 0.52 Ti 0.48 )O 3 /SrRuO 3 Heterostructures

Published:1997-05-16 Issue:5315 Volume:276 Page:1100-1103
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Ahn C. H.¹²³,Tybell T.¹²³,Antognazza L.¹²³,Char K.¹²³,Hammond R. H.¹²³,Beasley M. R.¹²³,Fischer Ø.¹²³,Triscone J.-M.¹²³

Affiliation:

1. C. H. Ahn, T. Tybell, L. Antognazza, Ø. Fischer, J.-M. Triscone, Département de Physique de la Matière Condensée, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva 4, Switzerland.

2. K. Char, Conductus Inc., 969 West Maude Avenue, Sunnyvale, CA 94086, USA.

3. R. H. Hammond and M. R. Beasley, Department of Applied Physics, Stanford University, Stanford, CA 94305, USA.

Abstract

A scanning probe microscope was used to induce local, nonvolatile field effects in epitaxial, ferroelectric Pb(Zr 0.52 Ti 0.48 )O 3 /SrRuO 3 heterostructures. Field-effected regions with linewidths as small as 3500 angstroms were written by locally switching the polarization field of the Pb(Zr 0.52 Ti 0.48 )O 3 layer; the electronic density of the underlying metallic SrRuO 3 layer was modified and the sheet resistance was changed by up to 300 ohms per square. This procedure is completely reversible and allows submicrometer electronic features to be written directly in two dimensions, with no external electrical contacts or lithographic steps required.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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