Characterization of anisotype and isotype Hg0.8Cd0.2Te/CdTe heterojunctions-Reference-Cited by-同舟云学术

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Characterization of anisotype and isotype Hg0.8Cd0.2Te/CdTe heterojunctions

Published:1985-01 Issue:1 Volume:3 Page:246-254
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

LoVecchio P.,Reine M. B.,Grimbergen M. N.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.573211

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Current status and issues in the surface passivation technology of mercury cadmium telluride infrared detectors;Semiconductor Science and Technology;1998-08-01

2. Barrier formation at graded HgTe/CdTe heterojunctions;Journal of Applied Physics;1996-11

3. Layer-by-layer electrodeposition of cadmium telluride onto silicon;Journal of Crystal Growth;1996-02

4. Effect of a valence-band barrier on the quantum efficiency and background-limited dynamic resistance of compositionally graded HgCdTe P-on-n heterojunction photodiodes;Journal of Electronic Materials;1995-09

5. Electrical and structural properties of epitaxial CdTe/HgCdTe interfaces;Journal of Electronic Materials;1995-09

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