A model for high temperature growth of CdTe by metal organic chemical vapor deposition-Reference-Cited by-同舟云学术

A model for high temperature growth of CdTe by metal organic chemical vapor deposition

Author:

Amir N.,Goren D.,Fekete D.,Nemirovsky Y.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

Reference12 articles.

1. G. B. Stringfellow, Organometallic Vapor-Phase Epitaxy(Academic Press, New York, 1989) Ch. 4 and 5.

3. N. Amir, D. Fekete and Y. Nemirovsky, J. Appl. Phys., to be published (1990).

4. A. S. Grove, Physics and Technology of Semiconductor Devices (Wiley, New York, 1967) Ch. 1.

5. N. Amir, “Characterization and Growth of MOCVD MCT,” M. Sc. Thesis, Technion (1989).

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

2. Long-range order in CdZnTe epilayers;Journal of Physics D: Applied Physics;1999-12-22

4. Metal-organic vapour phase epitaxy;Narrow-gap II–VI Compounds for Optoelectronic and Electromagnetic Applications;1997

5. Surfaces/interfaces of narrow-gap II-VI compounds;Narrow-gap II–VI Compounds for Optoelectronic and Electromagnetic Applications;1997