Simple interpretation of metal/wurtzite–GaN barrier heights
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370861
Reference14 articles.
1. Barrier heights of GaN Schottky contacts
2. Structural and electronic properties of ideal nitride/Al interfaces
3. Influence of the exchange reaction on the electronic structure of GaN/Al junctions
4. Surface states and Fermi-level pinning at clean and Al covered GaN surfaces
5. The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation
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