Structural and electronic properties of ideal nitride/Al interfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.4849/fulltext
Reference62 articles.
1. GaN Laser Diode Brightens Hopes for a Long‐Lived, Short‐Wavelength Device
2. Characteristics of light‐emitting diodes based on GaNp‐njunctions grown by plasma‐assisted molecular beam epitaxy
3. A bilayer Ti/Ag ohmic contact for highly doped n‐type GaN films
4. Very low resistance multilayer Ohmic contact to n‐GaN
5. Metal contacts to gallium nitride
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