Surface states and Fermi-level pinning at clean and Al covered GaN surfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.59.1609/fulltext
Reference19 articles.
1. Strain effects on the interface properties of nitride semiconductors
2. Polarization-Based Calculation of the Dielectric Tensor of Polar Crystals
3. Valence band splittings and band offsets of AlN, GaN, and InN
4. Clean and As-Covered Zinc-Blende GaN (001) Surfaces: Novel Surface Structures and Surfactant Behavior
5. Valence-band photoemission from GaN(001) and GaAs: GaN surfaces
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