Synchrotron-based photoemission study of electronic structure of the Cs/GaN ultrathin interface-Reference-Cited by-同舟云学术

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Synchrotron-based photoemission study of electronic structure of the Cs/GaN ultrathin interface

Published:2018-03 Issue: Volume:271 Page:6-10
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Benemanskaya G.V.,Kukushkin S.А.,Dementev P.A.,Lapushkin M.N.,Timoshnev S.N.,Smirnov D.V.

Funder

Russian Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference22 articles.

1. Angle-resolved photoemission from stoichiometric GaN(0001)-1×1

2. Surface and bulk electronic structure of thin-film wurtzite GaN

3. Observation of highly dispersive surface states on GaN(0001)1×1

4. Valence-band photoemission from the GaN(0001) surface

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Changes in the Electronic Properties of the GaN/Si(111) Surface under Li Adsorption;Semiconductors;2023-11

2. Photoemission Studies of the Electronic Structure of GaN Grown by Plasma Assisted Molecular Beam Epitaxy;Physics of the Solid State;2019-12

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